Caracterização do transporte de portadores de carga no semicondutor Sulfeto de Zinco (ZnS) dopado tipo n
Abstract
Neste trabalho foi deduzida teoricamente a velocidade de deriva, o deslocamento e a mobilidade dos portadores de carga em um semicondutor dopado tipo n. Para tanto, utilizamos uma equação semi-clássica baseada na segunda lei de Newton. A aplicação se deu no semicondutor Sulfeto de Zinco (ZnS) nas fases wurtzite (WZ) e zincblende (ZB), dopado tipo n e submetido a campos elétricos de baixa intensidade. A dependência destas propriedades de transporte em função da intensidade do campo elétrico e da temperatura foi analisada. O principal resultado obtido é que a mobilidade na fase WZ é maior que na fase ZB.Downloads
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